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2SK556 - TRANS MOS-N-FET 450V/12A/100W - Manual Sonigate

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Enviado por sonigate em 03/05/2011
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Circuito Integrado TOP246Y - Manual Sonigate

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PRODUCT 3 230 VAC ± 15% 4 All package types provide the following transparent features: Soft-start, 132 kHz switching frequency (automatically reduced at light load), frequency jittering for lower EMI, wider DC MAX , hysteretic thermal shutdown and larger creepage packages. In addition, all critical parameters (i.e. current limit, frequency, PWM gain) have tighter temperature and absolute tolerance, to simplify design and optimize system cost. FX Open Frame 2 85-265 VAC TOPSwitch-GX ® DC OUT
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Diodo 1N5339B - Manual Sonigate

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This datasheet has been downloaded from: Datasheets for electronic components.
Enviado por sonigate em 04/05/2011
Detalhes sobre o arquivo: 6 páginas.

Tiristores - Diacs, Sidacs, SCRs e Triacs 1.25 Amp 600 Volt - Manual Sonigate

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www.unisonic.com.tw 1 of 5 Copyright © 200 Unisonic Technologies Co., Ltd QW-R301-006.B DESCRIPTION ORDERING INFORMATION SCR *Pb-free plating product number: X0202L/X0202AL The UTC X0202/A SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuit, ……. * I T(RMS) : 1.25A * V DRM /V RRM :600/800V
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2SA1294 Silicon PNP Epitaxial Planar Transistor - Manual Sonigate

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f T –I E Characteristics (Typical) I B1 (mA) –500 –1. 5A –1. 0A V BB1 (V) –10 10m s R L (Ω) 12 V CC (V) –60 –300 mA I C (A) –5 –50 0mA –0.02 –0.1 –0.5 –1 –5 –15–10 –0.02 –0.1 –1 –10–5–0.5 –15 –3.0A 20.0min 4.0max 125˚C 3.5 0 19.9 ±0.3 4.0 Without Heatsink Natural Cooling 0 0 Without Heatsink a b –100mA 200 200 100 100 130 100 Typ Emitter Current I E (A) 125˚C –50mA 15.6 ±0.4 9.6 DC –200m 25˚C Typ (V CE =–12V) 10 50 20 40 60 50 10 A
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Transistor FQPF12N60C MOSFET N-CH 600V 12A TO-220F - Manual Sonigate

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Absolute Maximum Ratings Thermal Characteristics Features Description G SD • 12A, 600V, R DS(on) = 0.65Ω @V GS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 21pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant FQP12N60C FQPF12N60C FQP12N60C FQPF12N60C September 2007 F Q P 1 2 N 6 0 C / F Q P F 1 2 N 6 0 C 6 0 0 V N - C h a n n e l M O S F E T FQP12N60C / FQPF12N60C Rev. B1 TO-220F 51 0.41 TO-220 Unit Unit G SD 225 1.78 G D
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TRANSISTOR 5L0380RTU TO220F 4PINOS - Manual Sonigate

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1.6.7.8 Drain 2. GND 3. V CC 4. FB 5. NC Rev.1.0.5 *Asterisk - KA5M0365RN, KA5L0365RN TO-220F-4L 1. GND 2. Drain 3. V CC 4. FB 2.5R 1R 8-DIP #1 GND #2 DRAIN OVER VOLTAGE S/D (*#2 GND) #3 V CC ©2002 Fairchild Semiconductor Corporation OSC (*#1.6.7.8 DRAIN) #4 FB 1mA 5V Vref SFET (*#4 FB) (*#3 V CC ) Thermal S/D 32V Power on reset 27V 7.5V 9V 5µA + − + 1
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MC145106 = CD45106 - PLL FREQUENCY SYNTHESIZER CMOS - Manual Sonigate

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18 1 MC145106 DW SUFFIX SOG PACKAGE CASE 751D BLOCK DIAGRAM ORDERING INFORMATION MC145106P Plastic DIP MC145106DW SOG Package P SUFFIX PLASTIC DIP CASE 707 PHASE DETECTOR Order this document by MC145106/D P0 P1 P2 P3 P4 P5 P6 P7 P8 © Motorola, Inc. 1995 REV 2 8/95 φDetout OSCout OSCin DIVIDE–BY–N COUNTER 29 – 1 LD fin FS LD P8 P1 P0 P7 P6 P5 P4 P7 P8 P2 P1 P0 P6 P5 P4 P3 15 16 17 18 10 12 13 10 15 16 17 18 19 20 12 13 11 11 5 4 3 2 1 9 8 7 6 4 3 2 1 9 8 7 fin fin
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DIODO FMBG19L (90V/4A) TO220F - Manual Sonigate

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5.0 3.0 5.0 I R (H) (mA) C V R =V RM, Ta=100°CV R = V RM 16.913.5 ± 0.5 16.913.5 ± 0.5 I F (AV) (A) 50Hz Half-cycle Sinewave Single Shot Center-tap max per elementmaxperelement B Fig. A (ns) Peak Forward Surge Current I Peak Forward Surge Current I Peak Forward Surge Current I Reverse Voltage V R (V) Reverse Voltage V R (V) Reverse Voltage V R (V) 0.83.9 0.83.9 Forward Current I Forward Current I Forward Current I Forward Voltage V F (V) Forward Voltage V F (V) Forward Voltage V F (V) t rr
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2SC2625 - POWER TRANSISTORS(10A,400V,80W) - Manual Sonigate

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